The In doped n-ZnO nanowires (NWs) arrays were grown on In_0.1Ga_0.9N substrates via the chemical vapor deposition method.The electrical transport measurements on single n-ZnO NWs show that they have a resistivity (0.001 Ω cm) about 20 times lower than that of the n-ZnO NWs grown on GaN substrates via the same method.This result indicates that indium atoms from the In_0.1Ga_0.9N substrate may be doped into the ZnO NWs during the high-temperature synthesis process.The n-ZnO single NW (SNW)/p⁺-Si heterojunctions were fabricated and their electroluminescence properties were studied.The room-temperature electroluminescence spectra show a narrow 380 nm excitonic peak from ZnO SNW,and a broad emission band centeres at 700 nm,which originates from the luminescent centers located in the native SiO_x layer on the p+-Si substrate.